Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure
Patent
1997-10-01
2000-01-11
Abraham, Fetsum
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
257575, 257577, 257580, 257582, 257583, 257173, 257176, 257355, 257361, 257362, 257363, 257565, H01L 2954
Patent
active
060139412
ABSTRACT:
A semiconductor device provided with a planar bipolar transistor and a built-in ingredient acting as an element to protect the bipolar transistor from an external surge voltage e.g. an electrostatic surge voltage and the like, is provided with a planar bipolar transistor further provided with a doped region having a conductivity opposite to that of a semiconductor substrate in which the foregoing planar bipolar transistor is produced, the doped region being produced along the top surface of the semiconductor substrate at a location close to the bipolar transistor, and the emitter of the bipolar transistor being connected the doped region and a fixed potential (V.sub.EE) or the ground potential, whereby the operation speed of a circuit including the transistor is not reduced by potential parasitic capacitors which otherwise accompany the built-in ingredients produced to protect the transistor from an external surge voltage e.g. an electrostatic surge voltage and the like.
REFERENCES:
patent: 4604640 (1986-08-01), Colman et al.
patent: 4827322 (1989-05-01), Takata
patent: 4868624 (1989-09-01), Grung et al.
patent: 4967243 (1990-10-01), Baliga et al.
patent: 4982244 (1991-01-01), Kapoor
patent: 5481132 (1996-01-01), Moreau
Abraham Fetsum
OKI Electric Industry Co., Ltd.
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