Integrated circuit contacts having resistive electromigration ch

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

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257758, 257759, H01L 2348, H01L 2940

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active

057604770

ABSTRACT:
An integrated circuit structure, such as a stackable integrated circuit chip, having at least one face. The structure comprises at least one elongate conductor running therein and terminating in a contact section having an exposed end at the at least at one face of the structure. At least one face conductor forms an electrical interface with the exposed end of the contact section. Means for limiting electromigration about the electrical interface, such as a contact section of the conductor having a cross-sectional area greater then a nominal-sectional area of the conductor, are disclosed.

REFERENCES:
patent: 4551629 (1985-11-01), Carson et al.
patent: 4770640 (1988-09-01), Walter
patent: 4868712 (1989-09-01), Woodman
patent: 4875139 (1989-10-01), Fukui
patent: 4943539 (1990-07-01), Wilson et al.
patent: 4983533 (1991-01-01), Go
patent: 5019943 (1991-05-01), Fassbender et al.
patent: 5110298 (1992-05-01), Dorinski et al.
patent: 5202754 (1993-04-01), Bertin et al.
patent: 5235672 (1993-08-01), Carson et al.
patent: 5247423 (1993-09-01), Lin et al.
patent: 5266833 (1993-11-01), Capps
patent: 5270261 (1993-12-01), Bertin et al.
patent: 5285571 (1994-02-01), Gorczyca et al.
patent: 5315147 (1994-05-01), Solomon
patent: 5506450 (1996-04-01), Lee et al.
patent: 5517754 (1996-05-01), Beilstein, Jr. et al.
patent: 5571754 (1996-11-01), Bertin et al.
patent: 5585674 (1996-12-01), Geffken et al.
patent: 5623166 (1997-04-01), Olowolafe et al.
IBM Technical Disclosure Bulletin, "Process for Producing Lateral Chip Connectors", vol. 21, No. 3B, (Aug. 1989).
IBM Technical Disclosure Bulletin, "Schottky Barrier Diode Structure and Conductor Metallurgy with Increased Electromigration Resistance", vol. 20, No. 9, pp. 3484-3485, (Feb. 1978).
IBM Technical Disclosure Bulletin, "Process for Producing Lateral Chip Connectors", vol. 21, No. 3B, (Aug. 1989).
"Process for Producing Lateral Chip Connector", IBM Tech. Disc. Bull., vol. 32, No. 3B, pp. 410-411, Aug. 1, 1989.
Chu et al., "Schottky Barrier Diode Structure and Conductor Metallurgy with Increased Electromigration Resistance", IBM Tech. Disc. Bull., vol. 20, No. 9, pp. 2484-2485, Feb. 1, 1978.

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