High electron mobility transistor with an improved interface bet

Details High electron mobility transistor with an improved interface bet High electron mobility transistor with an improved interface bet

1995-12-05

1998-06-02

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257 24, 257284, H01L 29201, H01L 29812

Patent

active

057604274

ABSTRACT:
The present invention provides a semiconductor multi-layer structure which has a channel layer made of a first compound semiconductor having a first conduction band edge level. The channel layer has a first thickness sufficient for confining a two-dimensional electron gas. The semiconductor multi-layer structure also has a donor layer overlying the channel layer. The donor layer is made of a second compound semiconductor having a second conduction band edge level higher than the first conduction band edge level. The donor layer is doped with an impurity. The donor layer is sufficiently thin for allowing electrons to show a tunneling across the donor layer. The semiconductor multi-layer structure also has a single quantum well layer overlying the donor layer. The quantum well layer is made of a third compound semiconductor having a third conduction band edge level lower than the second-conduction band edge level. The single quantum well layer is sufficiently thin for preventing any formation of a two-dimensional electron gas. The semiconductor multi-layer structure also has a Shottky barrier layer overlying the single quantum well layer. The Schottky barrier layer is made of a fourth compound semiconductor having a fourth conduction band edge level higher than the third conduction band edge level. The Schottky barrier layer is sufficiently thin for allowing electrons to show a tunneling across the Shottky barrier layer. The semiconductor multi-layer structure also has a cap layer overlying the Schottky barrier layer. The cap layer is made of a fifth compound semiconductor having a fifth conduction band edge level lower than the fourth conduction band edge level. The cap layer is doped with an impurity. When a bias is applied between the channel layer and the cap layer, then electrons move between the channel layer and the cap layer via tunnelings across the Schottky barrier layer and across the donor layer.

REFERENCES:
patent: 5313093 (1994-05-01), Nakagawa
patent: 5548138 (1996-08-01), Tanimoto et al.
patent: 5548139 (1996-08-01), Ando
T. Nittono et al., "Non-Alloyed Ohmic Contacts to n-GaAs Using Compositionally Graded In.sub.x Ga.sub.1-x As Layers", Japanese Journal of Applied Physics, Sep. 1988, vol. 27, No. 9, pp. 1718-1722.
T. Enoki et al., "Delay Time Analysis for 0.4- to 5-um-Gate InAlAs-InGaAs HEMT's", IEEE Electron Device Letters, No. 1990, vol. 11, No. 11, pp. 502-504.
K. Onda et al., "Highly Reliabel InAlAs/InGaAs Hetero-junction FETs Fabricated Using Completely Molybdenum-Based Electrode Technology (COMET)", IEEE, pp. 261-264. no date.

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