Method for preventing poisoned vias and trenches

Details Method for preventing poisoned vias and trenches Method for preventing poisoned vias and trenches

1998-10-05

2000-01-11

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438740, 438743, 438723, 216 18, 216 39, 216 67, 216 79, H01B 1300

Patent

active

060135816

ABSTRACT:
A method for preventing the occurrence of poisoned trenches and vias in a dual damascene process that includes performing a densification process, such as an plasma treatment, on the surface of the exposed dielectric layer around the openings before the openings are filled with conductive material. The densified surface of the dielectric layer is able to efficiently prevent the occurrence of poisoned trenches and vias caused by the outgassing phenomena.

REFERENCES:
patent: 5429710 (1995-07-01), Akiba et al.
patent: 5926732 (1999-07-01), Matsuura

Affiliated with

Also associated with

Rating

Method for preventing poisoned vias and trenches does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for preventing poisoned vias and trenches, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for preventing poisoned vias and trenches will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1462149