Preprocessing method of metal film forming process

Details Preprocessing method of metal film forming process Preprocessing method of metal film forming process

1997-11-13

2000-01-11

Picardat, Kevin M.

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

216 37, 216 67, 216 69, H01L 21302

Patent

active

060135808

ABSTRACT:
A preprocessing method of a metal film formation process before formation of a BLM film on a resist film of a substrate to be processed, wherein the resist film of substrate to be processed is irradiated with plasma, utilizing a plasma processing apparatus providing independent plasma generating power source and substrate bias power source to form an overhand area at the end face of a connecting hole and change the property of the surface area. The plasma generating power and substrate bias voltage can be set adequately. Thereby irradiation of plasma can be performed easily, change of property at the surface of resist film can be done quickly and shape control of the end face of the connecting hole can also be executed very easily.

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patent: 5462638 (1995-10-01), Datta et al.
patent: 5486483 (1996-01-01), Lammert
patent: 5498312 (1996-03-01), Laermer et al.
patent: 5705432 (1998-01-01), Lee et al.

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