Semiconductor element

Details Semiconductor element Semiconductor element

1981-08-05

1985-04-16

Edlow, Martin H.

357 55, 357 34, 357 35, 357 51, H01L 2972

Patent

active

045119120

ABSTRACT:
Semiconductor element, including at least one bi-polar power transistor having parallel-connected transistor regions, active and contacted partial base zone regions, an emitter zone-base zone pn-junction, and base barrier resistances disposed between the active base regions at the emitter-base pn-junction and the contacted base regions, the greater part of the base current being conducted through the base barrier resistances and the voltage drop over the emitter region being small compared to the voltage between the active base region and the contacted base region.

REFERENCES:
patent: 3740621 (1973-06-01), Carley
Uchizaki et al., "3-GHz 15-W Silicon Bipolar Transistors", IEEE Trans. Microwave Theory & Techniques, vol. MTT-27, No. 12, Dec. 1979, pp. 1038-1040.
Vacca, A. A., "The Case for Emitter-Coupled Logic", Electronics, pp. 48-50, Apr. 26, 1971.

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