Method to imporve metal step coverage by contact reflow

Details Method to imporve metal step coverage by contact reflow Method to imporve metal step coverage by contact reflow

1995-06-07

1998-06-02

Quach, T. N.

Fishing, trapping, and vermin destroying

437228, 437240, 437947, 437982, H01L 21311

Patent

active

057598690

ABSTRACT:
A method for forming sloped contact corners of an integrated circuit, and an integrated circuit formed according to the same, is disclosed. A first oxide layer is formed over the integrated circuit. An insulating layer is formed over the oxide layer. The oxide and insulating layers are then patterned and etched to form a contact opening to expose a conductive region underlying a portion of the oxide layer. A second oxide layer is formed in the bottom of the contact opening. The insulating layer is then reflowed to form rounded contact corners after which the second oxide layer is removed.

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Nulman, J., "In-Situ Processing of Silicon Dielectrics . . ." in Rapid Thermal Processing of Electronic Materials, Wilson et al. ed., Material Research Society, 1987, pp. 141-146.

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