Method of manufacturing a semiconductor device including mesa bi

Details Method of manufacturing a semiconductor device including mesa bi Method of manufacturing a semiconductor device including mesa bi

1990-06-07

1991-06-18

Hearn, Bruce E.

Fishing, trapping, and vermin destroying

437 33, 437 73, 437162, 437980, 148DIG125, H01L 21331

Patent

active

050249568

ABSTRACT:
A method of manufacturing a semiconductor device having a monocrystalline silicon region (3) comprising a first zone (9) and an adjacent second zone (10) and laterally enclosed by a sunken oxide layer (4) and by an overlying highly doped polycrystalline silicon layer (5). The silicon layer (5) is laterally separated by an oxide layer (6) from the silicon region (3) and adjoins the first zone (9) on a narrow edge portion of the upper surface of the region (3), this zone being of the same conductivity type as the silicon layer (5). The second zone (10) is provided with an electrode layer (11). According to the invention, the silicon layer (5) is separated from the electrode layer (11) by an oxide strip (12A) formed in a self-aligned manner and at least one doped connection zone (13) having a width determined by said oxide strip (12A) is situated between said first and said second zones and located below said oxide strip (12A).

REFERENCES:
patent: 4338138 (1982-07-01), Cavaliere et al.
patent: 4845046 (1989-07-01), Shimbo
patent: 4933737 (1990-06-01), Nakamura et al.
patent: 4963957 (1990-10-01), Ohi et al.
Washio, et al., "A 48 ps ECL in a Self-Aligned Bipolar Technology", ISSCC 87, pp. 58-59.

Affiliated with

Also associated with

Rating

Method of manufacturing a semiconductor device including mesa bi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor device including mesa bi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device including mesa bi will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-145524