Method of forming capacitor of a semiconductor device and a semi

Details Method of forming capacitor of a semiconductor device and a semi Method of forming capacitor of a semiconductor device and a semi

1998-11-03

1999-11-09

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438255, H01L 2120

Patent

active

059813512

ABSTRACT:
A method of forming a capacitor of semiconductor devices, and the capacitor formed thereby, improves the reliability of semiconductor devices by maximizing the capacitance of the capacitor through the stable increase of the surface area of its lower electrode material layer. The method includes: a) forming insulating layers with an oxide film placed on the top in sequence on a semiconductor substrate with a pattern formed thereon, and removing a predetermined portion of the insulating layers so as to form a contact hole; b) forming a lower electrode material layer of a capacitor on the oxide film over the semiconductor substrate containing the contact hole; c) removing the lower electrode material layer so as to expose a certain portion of the oxide film; d) undercutting the oxide film exposed by the removing of the lower electrode material layer; e) cleaning the surface containing the lower surface of the lower electrode material layer exposed by the undercutting of the oxide film; and f) carrying out a hemispherical grain (HSG) process in order to increase the surface area containing the lower surface of the lower electrode material layer exposed by the undercutting of the oxide film. The resultant capacitor has a lower surface of a lower electrode having a hemispherical shape.

REFERENCES:
patent: 5049517 (1991-09-01), Liu et al.
patent: 5759893 (1998-06-01), Wu
patent: 5759895 (1998-06-01), Tseng
patent: 5766995 (1998-06-01), Wu
patent: 5851878 (1998-12-01), Huang

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