Variable-capacitance diode element having wide capacitance varia

Details Variable-capacitance diode element having wide capacitance varia Variable-capacitance diode element having wide capacitance varia

1990-06-13

1991-06-18

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG4, 437 30, 437904, H01L 2174, H01L 2176

Patent

active

050249550

ABSTRACT:
A variable-capacitance diode element is disclosed which comprises a semiconductor substrate of a first conductivity type having an epitaxial layer of the first conductivity type provided on a main surface portion thereof, said epitaxial layer having a higher resistivity than that of said semiconductor substrate; a first diffusion layer of the first conductivity type diffused in said epitaxial layer and having a lower resistivity than that of said epitaxial layer; a second diffusion layer of a second conductivity type surrounded by said first diffusion layer and having a lower resistivity than that of said first diffusion layer; and a third diffusion layer of the second conductivity type of a small diffusion length covering an exposed portion of a major surface of said first diffusion layer and an exposed portion of a major surface of said second diffusion layer. With such construction, the capacitance variation range of the diode element is widened, and the high-frequency serial resistance R.sub.s is reduced, so that the quality factor Q is enhanced.

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