Method for forming contacts through a thick oxide layer on a sem

Details Method for forming contacts through a thick oxide layer on a sem Method for forming contacts through a thick oxide layer on a sem

1984-08-31

1990-01-09

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437187, 437225, 437238, 156643, 156646, 156653, 156657, 148DIG133, H01L 21316

Patent

active

048928453

ABSTRACT:
A method for fabricating contacts in a semiconductor substrate includes forming a thin buffer oxide layer (26) over a substrate (10) with active devices defined therein. Access openings (28), (30) and (32) are then formed in the thin oxide layer (26) and then aluminum columnar contacts (38), (40) and (42) formed therein with a predetermined height. A thick oxide layer of phosphorous silicate glass (50) is then formed over the built-up structure. A planarizing resist layer (52) is formed over top of the structure with a substantially thinner area defined proximate the upper surfaces of the columnar contacts (38, 40, 42). The thin areas (54, 56, 58) are removed by selectively etching away the upper surface of the resist layer (52) by an excited plasma process. The structure is then subjected to a phosphorous selective etch to remove only those portions of the thick oxide layer (52') proximate the upper surfaces of the columnar contacts (38, 40, 42). Interconnects are then formed on the surface for connection with the exposed surface of the columnar contacts.

REFERENCES:
patent: 4172004 (1979-10-01), Alcorn et al.
patent: 4392298 (1983-07-01), Barker et al.
patent: 4470874 (1984-09-01), Bartush et al.

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