Patent
1984-03-19
1986-07-08
James, Andrew J.
357 51, H01L 2978
Patent
active
045996393
ABSTRACT:
Gates of individual devices on a slice are connected through a resistance to the device substrate, and through the same resistance to other device gates. This interconnection and high-resistance drain gives the gate protection from static charge buildup and subsequent catastrophic discharge which would result in a faulty device. This method protects each gate from the time of deposition to final device packaging.
REFERENCES:
patent: 3676742 (1972-07-01), Russel et al.
patent: 4202001 (1980-05-01), Reichert et al.
patent: 4261004 (1981-04-01), Masuhara et al.
patent: 4426658 (1984-01-01), Gontowski
IBM Technical Disclosure Bulletin, vol. 19, #4, Sep. 1976 "Monolithic Integrated Circuit Fuse Link" by Deliduka et al.
Comfort James T.
Groover Robert O.
Hoel Carlton H.
James Andrew J.
Prenty Mark
LandOfFree
Process protection for individual device gates on large area MIS does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process protection for individual device gates on large area MIS, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process protection for individual device gates on large area MIS will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1454716