Method for growing single-crystalline semiconductor film and app

Details Method for growing single-crystalline semiconductor film and app Method for growing single-crystalline semiconductor film and app

1997-02-25

1998-12-15

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 98, 117107, 117914, C30B 3500

Patent

active

058490787

ABSTRACT:
A method for growing a high-quality single-crystalline semiconductor film on a substrate based on vapor phase growth while rotating the substrate and preventing micro-particles generated by a rotary drive unit from adhering onto the major plane of the substrate. The substrate 2 set inside the reaction chamber 21 is rotated using the rotary drive unit 7, a reaction gas 10 is fed to the major plane side of the substrate 2, a purge gas 3a is fed to the back space of the substrate in the reaction chamber 21 to replace a space 11a with a carrier gas atmosphere, where the rotary drive unit 7 is located in the purge gas discharge section 13, a purge gas discharge duct 12 is connected to the purge gas discharge section, and further to the purge gas discharge duct 12 is connected a gas flow controller 8, and serially in the downstream side thereof is connected an evacuation pump 9.

REFERENCES:
patent: 3231337 (1966-01-01), Barkemeyer
patent: 3641974 (1972-02-01), Yamada
patent: 5096534 (1992-03-01), Ozias
patent: 5244694 (1993-09-01), Ozias

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