Method for inducing damage for gettering to single crystal silic

Details Method for inducing damage for gettering to single crystal silic Method for inducing damage for gettering to single crystal silic

1995-05-05

1998-06-02

Morgan, Eileen P.

Abrading

Abrading process

Glass or stone abrading

451 36, 437 12, 148 332, H01L 21304

Patent

active

057590877

ABSTRACT:
A method for inducing damage for gettering to the rear surface of a single crystal silicon wafer by polishing the rear surface, which can provide a good gettering effect to the wafer and can also depress dusting characteristics of the rear surface of the wafer, is disclosed. The method comprises the steps of; moving the wafer on an abrasive cloth relatively, and supplying an abrasive liquid having a pH in the range of 4-9 which contains silica particles having an average diameter in the range of 0.1-10 .mu.m as abrasive grains, between the wafer and the abrasive cloth.

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patent: 5424224 (1995-06-01), Allen et al.
patent: 5539245 (1996-07-01), Imura et al.

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