Photoresist check patterns in highly integrated circuits having

Radiation imagery chemistry: process – composition – or product th – Imaged product – Structurally defined

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430 16, 430 30, G03C 300

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active

059811145

ABSTRACT:
A photoresist check pattern structure in a semiconductor integrated circuit device has a pattern test region and a photoresist check pattern. The pattern test region has a plurality of step regions corresponding to surface steps developed during respective process steps for fabricating the semiconductor device. The surface steps are formed in a one-side concave shape in a plane view. The photoresist check pattern extends continuously across at least one of the surface steps in the pattern test region and which has substantially flat resist surfaces. The photo resist check patterns include a pattern formed in a dimension more severe than that according to design rules for semiconductor circuit elements on the substrate. With this, it is possible to check easily as to whether the exposure/development of photoresist films corresponding to respective interconnect layers has been carried out with the desired accuracy being maintained.

REFERENCES:
patent: 4679942 (1987-07-01), Suw
patent: 4704027 (1987-11-01), Phillips
patent: 4806457 (1989-02-01), Yanagisawa

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