Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1985-11-27

1987-11-17

James, Andrew J.

357 4, 357 238, 357 52, 357 59A, 357 59F, 357 20, H01L 2940, H01L 2978, H01L 2904

Patent

active

047077204

ABSTRACT:
There is disclosed an NPN transistor comprising collector region of N conductivity type, base region of P conductivity type formed in the collector region, and emitter region of N conductivity type formed in the collector region. The collector and emitter regions define therebetween a planar PN junction. The NPN transistor further comprises a field plate electrode layer, when the transistor is viewed from above, extending from the periphery of the base region to the collector region. The field plate electrode layer comprises P conductivity semiconductor portion and N conductivity semiconductor portion. The P conductivity semiconductor portion is on the side of the base region. The N conductivity semiconductor portion is on the side of the collector region.

REFERENCES:
patent: 3728591 (1973-04-01), Sunshine
patent: 3911473 (1975-10-01), Nienhuis
patent: 4041522 (1977-08-01), Oguey et al.
patent: 4157563 (1979-06-01), Bosselaar
patent: 4590506 (1986-05-01), Esser
patent: 4622575 (1986-11-01), Vora et al.

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