CMOS devices comprising thin film transistors arranged on a subs

Details CMOS devices comprising thin film transistors arranged on a subs CMOS devices comprising thin film transistors arranged on a subs

1997-02-10

1999-01-26

Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

257 69, 257 72, 257350, 257353, H01L 2904

Patent

active

058641513

ABSTRACT:
In a circuit configuration comprising an n-channel thin-film transistor and a p-channel thin-film transistor integrally produced on a single substrate, a lightly-doped drain (LDD) region is formed selectively in the n-channel thin-film transistor, and damages to semiconductor layers caused when implanting impurity ions are balanced between the n- and p-channel thin-film transistors. This configuration achieves a balance between the n- and p-channel thin-film transistors and thereby provides high characteristics CMOS circuit.

REFERENCES:
patent: 4621276 (1986-11-01), Halhi
patent: 5710606 (1998-01-01), Nakajima et al.
patent: 5712495 (1998-01-01), Suzawa

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