Method for inspecting defects of thin material film

Details Method for inspecting defects of thin material film Method for inspecting defects of thin material film

1984-12-18

1986-07-08

Smith, John D.

Coating processes

Measuring, testing, or indicating

29574, 427 82, B05D 512, H01L 2166

Patent

active

045992410

ABSTRACT:
A thin material film for the manufacture of a semiconductor device is inspected in the presence of pinholes therein. This is achieved by forming a reactive material film which can gasify through a chemical reaction with a reactive solution on the surface of a semiconductor substrate and thin material film to be tested which can chemically resist the reactive solution is formed on the surface of the reactive material film, whereby the structure obtained by the above steps is immersed into the reactive solution.

REFERENCES:
patent: 3672980 (1972-06-01), Glendinning
patent: 4473795 (1984-09-01), Wood
patent: 4514436 (1985-04-01), Moerschel
Ing et al, "Gas Permeation Study . . . ", Journal of the Electrochemical Society, vol. 109, No. 3, Mar., 1962, pp. 221-225.
"Search Report II concerning New Electric Materials", (most pertinent--p. 25, lines 4-5 from the bottom). (Date of publication unknown).

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