Semiconductor switching devices utilizing nonohmic current paths

Details Semiconductor switching devices utilizing nonohmic current paths Semiconductor switching devices utilizing nonohmic current paths

1975-12-29

1977-10-18

James, Andrew J.

357 38, 357 39, 357 55, 357 86, H01L 2948, H01L 2956, H01L 2964, H01L 2974

Patent

active

040548937

ABSTRACT:
The specification discloses semiconductor devices including a semiconductor body having layers of opposite conductivity types to form at least one P-N junction which intersects a face of the semiconductor body. A selected material spans the P-N junction in order to provide a nonohmic current path across the P-N junction, the conductance characteristics of the material being always positive. Electrodes contact the body to form an electrical switching device having improved operating characteristics over a wide temperature range. In the preferred embodiment, the material has a reverse breakdown higher than the forward conduction characteristics of the P-N junction and comprises a Schottky diode.

REFERENCES:
patent: 3401320 (1968-09-01), Weinstein
patent: 3475666 (1969-10-01), Hutson
patent: 3541357 (1970-11-01), Kram
patent: 3623029 (1971-11-01), Davidson
patent: 3634931 (1972-01-01), Kano et al.
patent: 3725753 (1973-04-01), Garrett
patent: 3913213 (1975-10-01), Millis et al.
IBM Technical Disclosure Bulletin, by Anantha et al., vol. 14, No. 1, June 1971 pp. 96 and 97.
IBM Technical Disclosure Bulletin, by Magdo et al., vol. 14, No. 3, Aug. 1971.
Hot Carrier Diodes Switch in Picoseconds by Soshea et al., Electronics, July 1963 pp. 53-55.
The Evolution of a High-Power Fast Switching Thyristor by Garrett, Electrical Engineer, May 1971, pp. 33-35.
IEEE Conference Oct. 1973, Characteristics of a 200 Amp Gate Turn-off Thyristor by Wolley et al., pp. 251-254.

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