Thin film EL devices and process for producing the same

Details Thin film EL devices and process for producing the same Thin film EL devices and process for producing the same

1986-05-27

1987-11-17

Swisher, Nancy A.

Stock material or miscellaneous articles

Composite

Of inorganic material

313503, 428691, 428917, B32B 904, B32B 1706

Patent

active

047074191

ABSTRACT:
The present invention provides a thin film EL device comprising an electrode layer, an emitting layer and an electrode layer formed on a substrate one over another, and an insulating layer interposed between the three layers, the emitting layer containing atoms of a rare-earth element and fluorine atoms in its host material, the atom ratio (F/RE) of the fluorine atoms (F) to the rare-earth atoms (RE) being adjusted to the range of 0.5 to 2.5, and a process for producing the EL device being characterized in that the emitting layer is prepared by forming a film under a condition substantially free from oxygen gas and/or moisture and subjecting the film to a heat treatment at a temperature of 200.degree. C. to 700.degree. C. so that the host material of the emitting layer contains atoms of a rare-earth element (RE) and fluorine atoms (F) in an adjusted atom ratio (F/RE) in the range of 0.5 to 2.5.
The present invention affords a thin film EL device which emits, for example, a green luminescence with a high brightness.

REFERENCES:
patent: 3950668 (1976-04-01), Mattis et al.
patent: 3980887 (1976-09-01), Mattis et al.
patent: 4162232 (1979-07-01), Yale
patent: 4508610 (1985-04-01), Freeman et al.

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