Method of fabricating a lateral PNP transistor

Details Method of fabricating a lateral PNP transistor Method of fabricating a lateral PNP transistor

1983-12-06

1985-04-16

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 148187, H01L 21265

Patent

active

045106762

ABSTRACT:
A method for making a lateral PNP transistor simultaneously with an NPN transistor and the resultant device wherein a first mask defines a base-width by the resistor implant for a P-type resistor and a second mask is overlaid asymmetrically on said first mask to partially cover the collector. At the same time that the NPN extrinsic base contact is made, P-type dopants are introduced in the areas exposed by the first and second masks to provide an emitter and a collector contact for the PNP transistor.

REFERENCES:
patent: 3873989 (1975-03-01), Schinella et al.
patent: 4298402 (1981-11-01), Hingarh
patent: 4329703 (1982-05-01), Priel et al.
patent: 4339767 (1982-07-01), Horng et al.
patent: 4407060 (1983-10-01), Sakurai
patent: 4419809 (1983-12-01), Riseman et al.
patent: 4431460 (1984-02-01), Barson et al.
patent: 4446611 (1984-05-01), Bergeron et al.
Yeh, IBM T. D. B., "Self-Aligned Integrated NPN (Vertical) and (Lateral) Structures", vol. 22, No. 9, Feb. 1980, pp. 4047-4051.

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