Silicon carbide process tube for semiconductor wafers

Details Silicon carbide process tube for semiconductor wafers Silicon carbide process tube for semiconductor wafers

1984-12-24

1986-07-08

Marcus, Stephen

Coating apparatus

Gas or vapor deposition

427 86, 427 93, C23C 1600

Patent

active

045986657

ABSTRACT:
A silicon carbide process tube which can be used for heat-treating a semiconductor device in a diffusion step, oxidation step and etc.. This silicon carbide process tube is characterized in that the inner surface of the process tube has a surface coarseness of 150 .mu.m or less.

REFERENCES:
patent: 2677627 (1954-05-01), Montgomery et al.
patent: 4089735 (1978-05-01), Sussmann
"The Etching of .alpha.-Silicon Carbide", Brander et al., Brit. J. of Applied Physics, 1967, vol. 18, pp. 905-912.
"Kinetic Studies on the Oxidation of Silicon Dioxide", Fitzer et al., Proc. 3rd Int. Conf., Sep. 17-20, 1973, pp. 320-336.

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