Silicon carbide electrical insulator material of low dielectric

Details Silicon carbide electrical insulator material of low dielectric Silicon carbide electrical insulator material of low dielectric

1982-04-29

1985-10-01

O'Keefe, Veronica

Compositions: ceramic

Ceramic compositions

Carbide or oxycarbide containing

428620, 428627, 501 89, 501 90, C22C 2900, C04B 3556

Patent

active

045446423

ABSTRACT:
A silicon carbide electrical insulator material of low dielectric constant comprising an electrically insulating sintered body containing silicon carbide as a main constituent and an element providing electrical insulating properties in sintered state, wherein the sintered body comprises an element selected from V family in the periodic table and the carrier concentration within the crystal grain of silicon carbide is 5.times.10.sup.17 cm.sup.-3 or less.

REFERENCES:
patent: 4172109 (1979-10-01), Smoak
patent: 4326039 (1982-04-01), Kriegesmann et al.
patent: 4370421 (1983-01-01), Matsushita et al.
patent: 4374793 (1983-02-01), Koga et al.

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