Thyristor with abrupt anode emitter junction

Details Thyristor with abrupt anode emitter junction Thyristor with abrupt anode emitter junction

1985-03-05

1986-04-29

Clawson, Jr., Joseph E.

357 89, 357 90, H01L 2974

Patent

active

045860700

ABSTRACT:
A thyristor has a pnpn four layer structure having a positive bevel in an anode side and a negative bevel in a cathode side. A ramp of a distribution of impurity concentrations in an anode-emitter layer near an anode-emitter junction is greater than a ramp of a distribution of impurity concentrations in a cathode-base layer near a central junction so as to improve the trade-off relation between the forward voltage drop and the withstand voltage.

REFERENCES:
patent: 3249831 (1966-05-01), New et al.
patent: 3361943 (1968-01-01), Knott et al.
patent: 3370209 (1968-02-01), Davis et al.
patent: 3428870 (1969-02-01), Davis
patent: 3437886 (1969-04-01), Edquist et al.
patent: 3449649 (1969-06-01), Irmler et al.
patent: 3538401 (1970-11-01), Chu
patent: 3575644 (1971-04-01), Huth et al.
patent: 4402001 (1983-08-01), Momma et al.

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