Method of making vertical bipolar transistor having base above b

Details Method of making vertical bipolar transistor having base above b Method of making vertical bipolar transistor having base above b

1985-03-26

1987-11-17

Roy, Upendra

Fishing, trapping, and vermin destroying

148DIG10, 148DIG82, 148DIG77, 357 51, 357 91, 357 34, 437 26, 437 31, 437 33, H01L 21265, H01L 2120

Patent

active

047063785

ABSTRACT:
In one embodiment of a vertical bipolar transistor constructed in accordance with the teachings of this invention, oxygen is implanted into the vertical bipolar transistor to provide a silicon dioxide layer between the base and collector of the vertical bipolar transistor. This silicon dioxide layer reduces the actual interface area of the base to collector junction, thereby decreasing the capacitance of the base-collector junction. In addition, the dielectric constant of the silicon dioxide layer is such that the capacitance across the silicon dioxide layer, and thus between the base and collector, is minimal relative to the base to collector capacitance provided by the base to collector junction itself. In an alternative embodiment, nitrogen is implanted to form silicon nitride regions rather than silicon dioxide regions.

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Kim et al., J. Electrochem. Soc., 131 (1984) 1934.
Arienzo et al., IBM-TDB, vol. 27 (Sep. 1984) 2371.

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