Passivation of gallium arsenide by nitrogen implantation

Details Passivation of gallium arsenide by nitrogen implantation Passivation of gallium arsenide by nitrogen implantation

1986-01-30

1987-11-17

Roy, Upendra

Fishing, trapping, and vermin destroying

148DIG84, 148DIG94, 357 61, 437 25, 437 41, 437174, 437 22, H01L 2956, H01L 21265

Patent

active

047063777

ABSTRACT:
A method of passivating a gallium arsenide surface includes the steps of implanting a subsurface layer of nitrogen ions and annealing and reactive the nitrogen to form a layer consisting primarily of gallium nitride.

REFERENCES:
patent: 4559238 (1985-12-01), Bujatti et al.
Makita et al., Appl. Phys. Letts., 35 (1979), 633.
IBM-TDB, 28 (1985), p. 196.
Wesch et al., Phys. Stat. Sol., 70a, (1982), 243.
Ahmed et al., Rad. Effects, 52 (1980), 211.

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