Method of manufacture for semiconductor accelerometer

Details Method of manufacture for semiconductor accelerometer Method of manufacture for semiconductor accelerometer

1985-09-27

1987-11-17

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

357 26, 437170, 437921, H01L 21467, H01L 2984

Patent

active

047063742

ABSTRACT:
An improved method of manufacturing a semiconductor accelerometer having a cantilevered beam is shown. In the fabricating process a semiconductor substrate is divided into p-type regions and n-type regions. The substrate is immersed into an electrochemical solution with a cathode and a suitable voltage is applied. Certain portions of the substate are protected from the etching by the voltage such that the semiconductor substrate is etched to form the cantilevered beam.

REFERENCES:
patent: 4549427 (1985-10-01), Kolesar et al.
patent: 4597003 (1986-06-01), Aine et al.
Petersen et al., "Micromechanical Accelerometer . . . ," IEEE Transac. Electron Devices, V 29 (Jan. 1982) pp. 23-27.
Petersen, "Micromechanical voltage . . . ," Intl. Electron Devices Meeting (Dec. 4-6, 1978), pp. 100-103.
Sarro et al., "Silicon Cantilever Beams . . . ", J. Electrochem. Soc., Aug. 1986, pp. 1724-1729.
IEEE Electron Devices, "A Batch-Fabricated Silicon Accelerometer" vol. ED-26, No. 12, Dec. 1979, pp. 1911-1917.

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