Silicon doped with cadmium to reduce lifetime

Details Silicon doped with cadmium to reduce lifetime Silicon doped with cadmium to reduce lifetime

1976-03-19

1978-08-15

Larkins, William D.

Metal treatment

Stock

Ferrous

357 38, 148190, H01L 29167

Patent

active

041077318

ABSTRACT:
A semiconductor device is doped with a multiple acceptor impurity having a monovalent energy level for forming a recombination center of carriers within the semiconductor body, and at least one multivalent energy level for capturing carriers within a depletion layer of a PN junction of the semiconductor body.

REFERENCES:
patent: 3514675 (1970-05-01), Purdom
patent: 3821784 (1974-06-01), Heald et al.
Gulamova et al., "Cadmium Levels in Silicon", Soviet Physics-Semiconductors, vol. 5, No. 4, Oct. 1971, pp. 687-689.
Lebedev et al. Sov. Physics-Semicond., vol. 2, No. 12, Jun. 1969, pp. 1543-1544.
Holm-Kennedy et al., Appl. Phys. Lett., vol. 22, No. 4, Feb. 15, 1973, pp. 167-169.

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