Bulk semiconductor logic device

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307216, 307217, 307218, 307299R, 357 55, H01L 2726

Patent

active

041077180

ABSTRACT:
A semiconductor device including a cathode and an anode for applying a bias electric field to a semiconductor exhibiting negative conductivity under high electric field, a region in which the electric field is locally lower than that in other regions, at least two signal electrodes of field effect type additionally provided in the region of said lower field to which signals are supplied to control the generation of high electric field domains for the performance of logical operations.

REFERENCES:
patent: 3538400 (1970-11-01), Yanai et al.
patent: 3566306 (1971-02-01), Esposito et al.
patent: 3602734 (1971-08-01), Matsukura et al.
patent: 3766372 (1973-10-01), Kataoka et al.
patent: 3991328 (1976-11-01), Upadhyayula
patent: 4047199 (1977-09-01), Kataoka et al.
J. J. Chang, "Semiconductor Bulk Effect Full-Adder Circuit", IBM Technical Disclosure Bulletin, vol. 12, No. 1, Jun. 1969, pp. 6-8.

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