Method of forming a hyperabrupt interface in a GaAs substrate

Details Method of forming a hyperabrupt interface in a GaAs substrate Method of forming a hyperabrupt interface in a GaAs substrate

1981-10-15

1983-07-05

Roy, Upendra

Metal treatment

Compositions

Heat treating

29571, 29576B, 148187, 357 61, 357 91, H01L 21263, H01L 2126, H01L 21203

Patent

active

043916511

ABSTRACT:
A method of fabricating improved semiconductor devices, such as FET's, wh require or are improved by a hyperabrupt interface between the active channel and the underlying insulating region. A substrate, such as GaAs, is polished and then implanted with light ions, such as protons, to amorphize the crystal structure down to a certain depth determined by the ion-beam accelerating voltage and the ion fluence level. The crystal is damaged but not amorphized below the lowest amorphization depth. The interface between the amorphized and the non-amorphized, but damaged, regions is a relatively narrow region which will become a hyperabrupt junction. The substrate is then implanted with donor ions, such as Si, in accordance with the requirements of the device to be fabricated and under conditions which provide a retrograde donor ion concentration profile with depth. An annealing/donor activating step is now performed at a relatively low temperature (600.degree. C. or less) to avoid breaking down the hyperabrupt interface.

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