Process for preparing amorphous silicon semiconductor

Details Process for preparing amorphous silicon semiconductor Process for preparing amorphous silicon semiconductor

1985-02-14

1986-04-15

Weisstuch, Aaron

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

136258, 357 2, 357 30, 427 74, 427 86, H01L 3118

Patent

active

045827214

ABSTRACT:
Preparation of an amorphous silicon semiconductor by glow discharge decomposition in an atmosphere containing a silicon compound in a glow discharge decomposition chamber which has a radio frequency electric field and a magnetic field crossing the electric field at right angles and in which the substrate is arranged substantially at right angles to the electric field. The amorphous silicon thin layer has excellent characteristics, particularly an excellent photoconductivity, can be prepared at a high rate of film formation, and also an amorphous semiconductor PIN homo- or hetero-junction photovoltaic device prepared according to the process of the invention has excellent characteristics.

REFERENCES:
patent: 4239554 (1980-12-01), Yamazaki
patent: 4365107 (1982-12-01), Yamauchi
patent: 4369205 (1983-01-01), Winterling et al.
patent: 4388482 (1983-06-01), Hamakawa et al.

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