Laterally stacked Schottky diodes for infrared sensor applicatio

Details Laterally stacked Schottky diodes for infrared sensor applicatio Laterally stacked Schottky diodes for infrared sensor applicatio

1989-06-09

1991-02-05

Hille, Rolf

357 15, 357 67S, 357 71S, H01L 2714

Patent

active

049909886

ABSTRACT:
Laterally stacked Schottky diodes (25) for infrared sensor applications are fabricated utilizing porous silicon (10) having pores (12). A Schottky metal contact (24) is formed in the pores, such as by electroplating. The sensors may be integrated with silicon circuits on the same chip with a high quantum efficiency, which is ideal for IR focal plane array applications due to uniformity and reproducibility.

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patent: 4864378 (1989-09-01), Tsaur
patent: 4876586 (1989-10-01), Dyck et al.
patent: 4939561 (1990-07-01), Yamaka et al.

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