Non-volatile memory devices fabricated from graded or stepped en

Details Non-volatile memory devices fabricated from graded or stepped en Non-volatile memory devices fabricated from graded or stepped en

1980-12-05

1982-11-16

Edlow, Martin H.

357 23, 357 52, H01L 2934, H01L 2978

Patent

active

RE0310832

ABSTRACT:
New non-volatile memory devices fabricated from graded or stepped energy band gap insulator MIM or MIS structures are described. With the graded or stepped insulator, electrons or holes can be injected from the gate electrode at low to moderate applied fields. The carriers flow under the applied field into a wide energy band gap insulator having a prescribed charge trapping layer. This layer captures and stores electrons (write operation) or holes (erase operation) with 100% efficiency.

REFERENCES:
patent: 4047974 (1977-09-01), Haran
patent: 4104675 (1978-08-01), DiMaria

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