Driving circuitry for a MOSFET having a source load

Details Driving circuitry for a MOSFET having a source load Driving circuitry for a MOSFET having a source load

1987-03-04

1988-04-12

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307270, 307578, 307579, 307451, 307303, 357 51, H03K 19094, H03K 17687, H03K 326, H01L 2702

Patent

active

047376678

ABSTRACT:
In a circuit for driving a MOSFET connected to a load on the source terminal, the MOSFET is configurated as a source follower that is driven by a voltage doubling circuit including two diodes (D1, D2) serially connected together. The drain terminal of the MOSFET is connected to the operating voltage source and its gate terminal to the voltage doubling circuit which includes a capacitor (C). One terminal of the capacitor is connected between the diodes and its other terminal is supplied with a clocked dc voltage. The first diode (D2) is formed by a lateral MOSFET, whose gate electrode is connected with the drain zone. The second diode is formed by a vertical bipolar transistor with low current gain. A resistor is located between the emitter zone and the source zone. This particular circuit geometry is readily suitable for realization in integrated form.

REFERENCES:
patent: 3271640 (1966-09-01), Moore
patent: 3667115 (1972-06-01), Barson et al.
patent: 4616143 (1986-10-01), Miyamoto
patent: 4677314 (1987-06-01), Shirato et al.
patent: 4698526 (1987-10-01), Allan
European Search Report Dated 5.12.86.
Siemens Components Article, 2 pages.

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