Method of making three dimensional structures of active and pass

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437 47, 437 51, 437225, 437249, 437935, 437915, 156647, H01L 21302

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047374705

ABSTRACT:
The disclosure relates to a three dimensional semiconductor structure formed in a semiconductor substrate wherein electrical components, both active and passive, are formed on the substrate surface as well as in grooves formed in the substrate at an angle and extending to the surface. The substrate surface is designed to lie in a predetermined crystallographic plane of the substrate material and the grooves extend in a predetermined crystallographic direction from said plane, this being accomplished by orientation dependent etching.

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Benjamin, "Forming Semiconductor Structures", IBMTDB, vol. 9, No. 1, Jun. 1966, p. 93.
Beam, "Influence of Crystal Orientations on Silicon Semiconductor Processing", Proc. of IEEE, vol. 57, No. 9, Sep. 1969-pp. 1469-1476.

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