Semiconductor switching device utilizing bipolar and MOS element

Details Semiconductor switching device utilizing bipolar and MOS element Semiconductor switching device utilizing bipolar and MOS element

1983-07-29

1986-04-29

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307270, 307299A, 307305, 307446, 357 43, H03K 1712

Patent

active

045859620

ABSTRACT:
A semiconductor switching device is disclosed in which a bipolar transistor has a plurality of emitter electrodes and in which each of said emitter electrodes is connected to one of a plurality of MOS transistors (so that the number of MOS transistors corresponds to the number of emitter electrodes of the bipolar transistor). The drains of the MOS transistors are connected in common, and the gate electrode and source electrode of each MOS transistor are each connected in common to the gate electrodes and source electrodes of the other MOS transistors.

REFERENCES:
patent: 4419683 (1983-12-01), Herberg
patent: 4464673 (1984-08-01), Patalong
patent: 4466010 (1984-08-01), Patalong
Tihanyi, "Functional Integration of Power MOS and Bipolar Devices", IEEE IEDM, Washington, D.C., 1980.

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