Reverse staggered type silicon thin film transistor

Details Reverse staggered type silicon thin film transistor Reverse staggered type silicon thin film transistor

1989-05-26

1990-12-18

James, Andrew J.

357 4, 357 2, 357 234, H01L 2978

Patent

active

049790064

ABSTRACT:
A reverse staggered type silicon thin film transistor includes a substrate having a gate electrode; a gate insulating layer on the substrate and the gate electrode, the gate insulating layer having a transistor-forming portion; a lower layer silicon film on the transistor-forming portion of the gate insulating layer and in contact therewith, the lower layer silicon film being formed at a first temperature and with a first thickness; an upper layer silicon film formed on the transistor-forming portion of the gate insulating layer at a second temperature which is lower than the first temperature and with a second thickness greater than the first thickness; and n-type silicon layer on the upper layer silicon film and in contact therewith; a source electrode on the n-type silicon layer; and a drain electrode on the n-type silicon layer.

REFERENCES:
patent: 4746961 (1988-05-01), Konishi et al.

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