Metal treatment – Compositions – Heat treating
Patent
1982-04-07
1987-07-14
Roy, Upendra
Metal treatment
Compositions
Heat treating
250398, 2504921, 357 91, 427 38, H01L 21263
Patent
active
046800611
ABSTRACT:
Semiconductor wafers are coated with metallic film by supporting the wafers individually adjacent a ring-shaped sputtering source. A vacuum chamber sputter coating apparatus has a number of work stations therein, at least one of which includes the ring-shaped sputtering source. Also included is a load lock; and an intermittently rotating vertical plate-like wafer carrier therewithin positioned closely adjacent the chamber entrance, and carrying wafers in turn from the load lock to the work stations. The carrier includes apertures each accepting a wafer therewithin in an upright position, with the wafers edgewise resiliently supported by clips. A chamber door is provided with a vacuum chuck to grasp a wafer presented vertically by a blade-like elevator which cooperates with a cassette and conveyor moving the cassette along a horizontal path below the chamber entrance. Closure of the door inserts the wafer into the clips within the carrier and chamber, and the reverse operation extracts a wafer previously coated at a sputtering work station. Both surfaces of the wafer can be accessed by processing equipment, for example, for wafer heating or cooling at some of the work stations. Thermal transfer for wafer heating or cooling is accomplished by introducing a gas at a pressure of approximately 100 to 1000 microns in a region between the wafer and a heating element or heat sink. The gas conducts thermal energy between the wafer and the heating element or heat sink.
REFERENCES:
patent: 3062507 (1962-11-01), Andrus
patent: 3190262 (1965-06-01), Bakish et al.
patent: 3250694 (1966-05-01), Maissel et al.
patent: 3562142 (1971-02-01), Lamont, Jr.
patent: 3566960 (1971-03-01), Stuart
patent: 3624391 (1971-11-01), Davison
patent: 3818982 (1974-06-01), Wagner
patent: 3901183 (1975-08-01), Wittkower
patent: 3920233 (1975-11-01), Stuckert
patent: 3993123 (1976-11-01), Chu et al.
patent: 4008683 (1977-02-01), Rose
patent: 4017403 (1977-04-01), Freeman
patent: 4067042 (1978-01-01), Novak et al.
patent: 4082958 (1978-04-01), Kirkpatrick
patent: 4118630 (1978-10-01), McKenna et al.
patent: 4139051 (1979-02-01), Jones et al.
patent: 4155011 (1979-05-01), Mark
patent: 4162401 (1979-07-01), King et al.
patent: 4194233 (1980-03-01), Jones et al.
patent: 4282924 (1981-08-01), Faretra
patent: 4297190 (1981-10-01), Garrett
Hammer IBM-TDB, 19 (1976) 2270.
Cuomo, J. J. IBM-TDB, 21 (1978) 840.
Bauer et al., IBM-TDB, 16 (1974) 3289.
Carbone et al., IBM Technical Disclosure Bulletin, vol. 22, No. 2, Jul. 1979, pp. 550-554.
Gardner et al., IBM Technical Disclosure Bulletin, vol. 21, No. 11, Apr. 1979, p. 4526.
Hanley et al., IEEE Trans. Nucl. Sci., Jun. 1967, pp. 933-937.
Ryding et al., "High Current Systems," Radiation Effects, 1979.
Wada et al., Japanese Journal of Applied Physics, vol. 14, No. 9, Sep. 1975, pp. 1351-1356.
Cole Stanley Z.
Fisher Gerald M.
Roy Upendra
Sgarbossa Peter J.
Varian Associates Inc.
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