Current source with a process selectable temperature coefficient

Details Current source with a process selectable temperature coefficient Current source with a process selectable temperature coefficient

1986-07-25

1990-12-18

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 37, 357 2312, H01L 21265

Patent

active

049786318

ABSTRACT:
A transistor (Q3, Q4) is configured to act as a current source. Of importance, the current provided by the current source has a process-selectable temperature dependence. By introducing ions into the transistor gate insulation (14, 20) the current provided by the current source can be either temperature independent, inversely related to temperature, or directly related to temperature, as desired.

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patent: 3760199 (1973-09-01), Graeme
patent: 4270081 (1981-05-01), Hareyama
IBM Technical Disclosure Bulletin, "Tunable Flatband . . . Oxide", vol. 28, No. 7, Dec. 1985, pp. 3008-3009.
Krusin-Elbaum et al., "Correlation of Negative and Positive Shifts in the Threshold Voltage with the Distribution of Iodine in SiO.sub.2 ", Jun., 1985, Device Research Conference, Boulder, CO.
Kazerounian et al., "CODMOS--A Depletion MOSFET Using Fixed Oxide Charge", 41st Annual Device Research Conference, IEEE Electron Devices Society, Jun. 20-22, 1983.
Blanchard et al., U.S. Patent Application Ser. No. 06/771,444 entitled "Method for Shifting the Threshold Voltage of DMOS Transistors".
"MOSpower Applications Handbook", edited by Severns et al., published by Siliconix Incorporated in 1984, pp. 5-9 to 5-14.

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