Method and system for producing thin films

Details Method and system for producing thin films Method and system for producing thin films

1988-03-14

1989-11-21

Nguyen, Nam X.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

20419224, 204298, 427 38, 118723, C23C 1400

Patent

active

048820237

ABSTRACT:
A method for forming multiple-component thin films using a separate ion cluster beam (ICB) source for each component. Stoichiometry control is provided by measuring the extraction currents across an acceleration voltage and controlling the component supply to the ICB source. The ion clusters are broken up into an atomic beam by microwave energy. If superconducting films are made, the atomic beams are passed through an oxygen plasma also generated by microwave energy to maximize oxygen incorporation into the thin film. The oxygenated atomic metal ion beams are focused onto a common substrate to form the multiple component thin film. Oxygen is kept away from the ICB sources by differential pumping seals.

REFERENCES:
patent: 4147573 (1979-04-01), Morimoto
patent: 4152478 (1979-05-01), Takagi
patent: 4522674 (1985-06-01), Ninsmiya et al.
patent: 4559901 (1985-12-01), Morimoto et al.
patent: 4624859 (1986-11-01), Akira et al.
patent: 4683838 (1987-08-01), Kimura et al.
patent: 4732761 (1988-03-01), Machida et al.
Yamanishi et al., "High-Temperature . . . Beam Method", Material Res. Soc. Sym. Pro., vol. 99, 11/1987.

Affiliated with

Also associated with

Rating

Method and system for producing thin films does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and system for producing thin films, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and system for producing thin films will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1424246