Method of manufacturing an optical semiconductor device

Details Method of manufacturing an optical semiconductor device Method of manufacturing an optical semiconductor device

1996-04-29

1998-12-29

Graybill, David

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Packaging or treatment of packaged semiconductor

438653, 438654, 438656, 438661, 438686, H01L 21283, H01L 2158

Patent

active

058540873

ABSTRACT:
A process wherein a Au layer 3 and a Sn layer 5 are laminated on a barrier layer 8 which is formed on an optical circuit substrate 1. An Au layer 5 having a predetermined thickness is formed on the laminated layers as a top layer. A junction portion 2 is constituted of these layers. An electrode layer of an optical semiconductor element 9 is made to contact with the top Au layer 5 and the optical semiconductor element 9 is pressed to the optical circuit substrate 1. Then, by heating, the optical semiconductor element 9 is joined on the optical circuit substrate. A weight % of Au and Sn in the junction portion 2 of the optical circuit substrate 1 is about 80%:20% before the joining. The electrode layer is formed as a thin Au layer. The optical circuit substrate 1 is heated at a temperature of 280.degree. C. or more such that the Au layer and the Sn layer are melted and is cooled such that Au and Sn are solidified.

REFERENCES:
patent: 5197654 (1993-03-01), Katz et al.
patent: 5234153 (1993-08-01), Bacon et al.
Patent Abstracts of Japan, vol. 13, No. 393 (E-814), Aug. 31, 1989.
Chin C. Lee et al., "A New Bonding Technology Using Gold and Tin Multilayer Composite Structures", IEEE Transactions on Componenets, Hybrids, and Manufacturing Technology, vol. 14, No. 2, Jun. 1991, pp. 407-411.

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