Method for preparation of silicon wafer

Details Method for preparation of silicon wafer Method for preparation of silicon wafer

1985-12-20

1987-07-14

Schmidt, Frederick R.

Abrasive tool making process, material, or composition

With carbohydrate or reaction product thereof

51283R, 51413, 51326, B24C 106

Patent

active

046793593

ABSTRACT:
A process for improving the finishing of silicon wafers intended for use as a base plate of an I.C. device. After the wafer has been cut from a silicon crystal and initially ground, then a slurry of water and silicon carbide particles is blasted against the surface to create a mattelike satin finish. This surface is then lapped to provide a mirrorlike finish.
To perform the method, the wafer is disposed in a cuplike fixture constructed of resilient material, which fixture defines a cylindrical recess which is of a diameter slightly greater than that of the wafer. The fixture has a support projecting upwardly from the bottom wall and defining an annular drainage passage therearound, which support has the wafer positioned thereon. The blasting media is ejected into the fixture to finish the surface on the wafer, and the slurry drains downwardly around the edge of the wafer into the annular drain passage, and then out through outlet openings which project radially through the wall of the fixture.

REFERENCES:
patent: 2345648 (1944-04-01), Wolfskill
patent: 3270464 (1966-09-01), Bowling, Jr.
patent: 3492763 (1970-02-01), Walsh
patent: 3701696 (1972-10-01), Mets
patent: 4042419 (1977-08-01), Heinke
Gettering Process: Buechele et al; IBM Technical Disclosure Bulletin, vol. 21, No. 8, Jan. 1979.

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