Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1985-12-18
1987-07-14
Roy, Upendra
Metal working
Method of mechanical manufacture
Assembling or joining
29571, 148 15, 148175, 148187, 148DIG10, 148DIG84, 357 16, 357 34, H01L 21265
Patent
active
046793054
ABSTRACT:
A method of manufacturing a heterojunction bipolar transistor comprising the steps of forming a first semiconductor layer of a first conductivity type as a collector on a semiconductor substrate, forming a second semiconductor layer of a second conductivity type as a base on the first semiconductor layer, forming a third semiconductor layer of the first conductivity type as an emitter on the second semiconductor layer, the third and second semiconductor layers constituting a heterojunction, selectively forming a first mask on the third semiconductor layer, ion-implanting ions of an impurity of the second conductivity type into the resultant structure using a first mask, thereby forming an external base region of the second conductivity type extending to the second semiconductor layer, forming a second mask on a side wall of the first mask, and ion-implanting a predetermined material into the resultant structure using the first and second masks, thereby forming a high-resistance layer for isolating the external base region in self-alignment with the emitter.
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Kabushiki Kaisha Toshiba
Roy Upendra
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