Multiple narrow-line-channel fet having improved noise character

Details Multiple narrow-line-channel fet having improved noise character Multiple narrow-line-channel fet having improved noise character

1992-09-30

1998-03-10

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257194, H01L 310328, H01L 310336

Patent

active

057264678

ABSTRACT:
Insulating layers are formed, for instance, by ion injection, in a multilayer of compound semiconductor layers in regions spaced at predetermined intervals, to leave a plurality of narrow channel layers between the insulating layers. A gate electrode is formed on the insulating layers and channel layers so as to traverse those layers.

REFERENCES:
patent: 4021789 (1977-05-01), Furman et al.
patent: 4796068 (1989-01-01), Katayama et al.
European Search Report dated Apr. 15,1993 in Application No. EP 92 11 7924.

Affiliated with

Also associated with

Rating

Multiple narrow-line-channel fet having improved noise character does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Multiple narrow-line-channel fet having improved noise character, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multiple narrow-line-channel fet having improved noise character will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-141972