Photosensor device photodiode and switch

Details Photosensor device photodiode and switch Photosensor device photodiode and switch

1990-08-27

1991-08-27

Mintel, William

357 32, 357 19, 357 59, 357 58, H01L 2714

Patent

active

050437852

ABSTRACT:
A photosensor device having a semiconductor layer disposed on a substrate. The semiconductor layer includes a lateral photosensor having a semiconductor junction arranged in a serpentine configuration and a lateral read-out switch. The lateral read-out switch and the lateral photosensor are formed on the semiconductor layer. The lateral photosensor has an area of a first conductivity type semiconductor and an area of a second conductivity type semiconductor. The lateral read-out switch includes an area of the first conductivity type and an area of the second conductivity type. The lateral photosensor and the lateral read-out switch are laterally adjacent, and substantially coplanar on the substrate.

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patent: 4733286 (1988-03-01), Matsumoto
Iguchi et al., "Lateral GaAs Photodetector Fabricated by Ga Focused-Ion-Beam Implantation", Japanese Journal of Applied Physics, vol. 25, No. 7, Jul. 1986, pp. 560-563.
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Seager et al., "Passivation of Grain Boundaries in Polycrystalline Silicon", Appl. Phys. Lett., 3415), Mar. 1, 1979, pp. 337-340.
Bachner et al., "A Hybrid Integrated Silicon Diode Array for Visible Earth-Horizon Sensing", Lincoln Lab., MIT, Lexington, Mass., 1971, pp. 262-266.
Burov et al., "Photoelectric Resonant Gate Transistor (PRGT)", Optical and Quantum Electronics, 7 (1975), pp. 474-480.

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