Semiconductor device having compound semiconductor FET of E/D st

Details Semiconductor device having compound semiconductor FET of E/D st Semiconductor device having compound semiconductor FET of E/D st

1990-11-02

1991-08-27

Hille, Rolf

357 16, 357 4, 357 56, H01L 2980

Patent

active

050437763

ABSTRACT:
The semiconductor device of the present invention includes on one and the same substrate a first transistor having a first semiconductor layer with high-impurity density on which is provided a second semiconductor layer with low-impurity density, where the first semiconductor layer being of N type and having electron affinity greater than that of the second semiconductor layer, and is equipped with a control electrode provided on the second semiconductor layer and at least two ohmic electrodes that are electrically connected to the first semiconductor layer on both sides of the control electrode, and a second transistor having a third semiconductor layer with low-impurity density provided on top of the second semiconductor layer on the first semiconductor layer, and is equipped with a control electrode provided on the third semiconductor layer and at least two ohmic electrodes that are electrically connected to the first semiconductor layer on both sides of the control electrode. Further, by setting the first semiconductor layer to be a P-type semiconductor having the sum of the electron affinity and the energy gap smaller than the sum of the electron affinity and the energy gap of the second semiconductor layer, there can be obtained a semiconductor using holes as carriers.

REFERENCES:
patent: 4605945 (1986-08-01), Katayama et al.
patent: 4636822 (1987-01-01), Codella et al.
patent: 4733283 (1988-03-01), Kuroda
patent: 4742379 (1988-05-01), Yamashita et al.
patent: 4771324 (1988-09-01), Odani et al.
New Device Structure for 4Kb HEMT SRAM, S. Kuroda, et al., GaAs IC Symposium, pp. 125-128, (1984).
A New Low-Noise AlGaAs/GaAs 2DEG FET with a Surface Undoped Layer, Hikaru Hida, et al., reprinted from IEEE Transactions on Electron Devices, vol. ED-33, No. 5, May 1986; pp. 601-607.

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