Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With pn junction isolation
Patent
1991-03-27
1993-01-26
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With pn junction isolation
257357, 257369, H01L 2906, H01L 2978, H01L 2702
Patent
active
051826216
ABSTRACT:
An A/D converter in the form of a complementary MOS integrated circuit and having a plurality of input channels. The input circuit includes a plurality of input protection circuits corresponding to the input channels. Each of the input protection circuits comprises an analog input terminal to be connected to receive an analog voltage signal, and a first semiconductor active element formed within a first conduction type island formed in the semiconductor substrate. The first semiconductor active element has one end connected to the input terminal and a second end connected to a first wiring conductor for a first voltage. The first semiconductor active element operates to discharge a first excessive voltage to the first wiring conductor when the first excessive voltage is applied to the input terminal. Each of the input protection circuits also comprises a second semiconductor active element formed within a second conduction type island formed in the semiconductor substrate, separately from the first island. The second semiconductor active element has one end connected to the input terminal and a second end connected to a second wiring conductor for a second voltage different from the first voltage. The second semiconductor active element operates to discharge a second excessive voltage to the second wiring conductor when the second excessive voltage is applied to the input terminal. The first semiconductor active elements and the second semiconductor active elements of all the input protection circuits are alternately located in such a manner that one first semiconductor active element is located between a pair of second semiconductor active elements and one second semiconductor active element is located between a pair of first semiconductor active elements.
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Webster's II New Riverside Univ. Dict., p. 78, 1984.
Muller et al, Device Electronics for IC's, 1986 pp. 454-465.
James Andrew J.
Meier Stephen D.
NEC Corporation
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