Method of manufacturing a broadband high emission power semicond

Details Method of manufacturing a broadband high emission power semicond Method of manufacturing a broadband high emission power semicond

1989-09-07

1991-08-27

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437129, 372 46, H01L 2938

Patent

active

050432915

ABSTRACT:
The present invention concerns a method for manufacturing a buried stripe semiconductor laser comprising the steps of depositing by epitaxy at least the heterostructure (51, 52, 53, 54) comprising at least one active material layer (53) on a substrate (50) and then depositing a dielectric mask (55) over the structure thus obtained and etching the latter through the mask (55) to obtain stripes in the active material layer (53) and any layer or layers (54) previously deposited by epitaxy over the active material layer (53), then carrying out impurity ionic implantation in the structure, protecting the active material stripes (53) and any layer or layers (54) that may have been deposited over this material by means of a mask (55) that is not transparent to ionic implantation.

REFERENCES:
patent: 4523961 (1985-06-01), Hartman
patent: 4660208 (1987-04-01), Johnston, Jr.
patent: 4888624 (1984-12-01), Johnston, Jr.
Channeled Substrate Buried Heterostructure InGaAsP/InP Laser Employing Fe Implant for Current Confinement, Appl. Phy. Lett., 44(3), p. 290.
High Power, Wide-Bandwidth, 1.55 .mu.m Wavelength, p. 944, GaInAsP DFB Laser, Kihara et al., Electronics Letter, 23(18).
High Speed Polyimide-Based Semi-Insulating Planar buried Heterostructures, Elecronic Letters, 23(24), p. 1263.

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