Method of manufacturing polycrystalline silicon thin film

Details Method of manufacturing polycrystalline silicon thin film Method of manufacturing polycrystalline silicon thin film

1994-11-23

1996-03-05

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437233, 148DIG93, 148DIG90, 117 8, 117904, H01L 21268, C30B 100

Patent

active

054967686

ABSTRACT:
In the first laser beam radiation, a laser beam having a predetermined energy density is scanned on each of predetermined unit irradiated regions at a scanning pitch smaller than the beam size, and in the second laser beam radiation, a laser beam having an energy density lower than that of the laser beam of the first radiation is scanned at a scanning pitch smaller than the beam size on each of unit irradiated regions different from those of the first laser beam radiation.

REFERENCES:
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patent: 5145808 (1992-09-01), Sameshima et al.
patent: 5308998 (1994-05-01), Yamazaki et al.
patent: 5313076 (1994-05-01), Yamazaki et al.
patent: 5338388 (1994-08-01), Sugahara et al.
patent: 5365875 (1994-11-01), Asai et al.
T. T. D'Ouville et al., J. Appl. Phys., 53, 7 (1982) 5086 ". . . Laser Annealed Polycrystalline Silicon Films".

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