Process for forming a semiconductor region adjacent to an insula

Details Process for forming a semiconductor region adjacent to an insula Process for forming a semiconductor region adjacent to an insula

1994-07-05

1996-03-05

Thomas, Tom

Fishing, trapping, and vermin destroying

437 62, 437974, 148DIG12, 148DIG135, H01L 2176

Patent

active

054967643

ABSTRACT:
An insulating layer is formed over a first substrate. Trenches are formed within a second substrate, and those trenches are filled with an insulating layer. The two substrate are bonded at their insulating layers. The portion of the second substrate away from the trenches is removed to form semiconductor regions over the insulating layer of the first substrate. Embodiments of the present invention allow better thickness control for SOI regions and lower leakage current compared to SOI layers that use LOCOS-type field isolation.

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